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QS5U13
Transistors
2.5V Drive Nch+SBD MOS FET
QS5U13
Structure
Silicon N-channel MOSFET
Schottky Barrier DIODE
External dimensions (Unit : mm)
TSMT5
1.0MAX
2.9
1.9
0.95 0.95
0.85
0.7
Features
1) The QS5U13 combines Nch MOSFET with a
(5)
(4)
0~0.1
Schottky barrier diode in a single TSMT5 package.
2) Low on-state resistance with fast switching.
(1)
(2)
(3)
0.4
0.16
3) Low voltage drive (2.5V).
4) The Independently connected Schottky barrier diode
has low forward voltage.
Applications
Load switch, DC / DC conversion
Packaging specifications
Each lead has same dimensions
Abbreviated symbol : U13
Equivalent circuit
Type
Package
Code
Taping
TR
(5)
(4)
QS5U13
Basic ordering unit (pieces)
3000
? 2
? 1
(1) Anode
(1)
(2)
(3)
(2) Source
(3) Gate
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Rev.A
(4) Drain
(5) Cathode
1/4
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相关代理商/技术参数
QS5U16
制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET
QS5U16_06
制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET
QS5U16TR
功能描述:MOSFET N-CH 30V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U17
制造商:ROHM Semiconductor 功能描述:MOSFET,Nch+SBD,Vdss=30V,Id=2A,TSMT5
QS5U17_1
制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET
QS5U17TR
功能描述:MOSFET N-CH 30V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U21
制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (?20V, ?1.5A)
QS5U21_06
制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Pch+SBD MOS FET